Ctr. 72-162 / 2008 .

MInNA

Domain

Recent advances in thin film’s growth methods have made it possible to obtain high quality InN thin films. Because of it’s bandgap which, as a result of impurities and growth conditions, varies in the range of 0.7 - 2 eV, as well as its excellent electron mobility, this material is an ideal candidate or the development of infrared detectors, lasers and high speed integrated circuits.

However, growing InN thin films of adequate quality poses significant challenges, especially with regard to obtaining a stoichiometric compound and containing the large number of intrinsic defects.

All these considerations justify the further study of growing InN thin films for optoelectronic applications via magnetron deposition, both RF and HIPIMS. Furthermore, the relative costs of growing InN films through magnetron sputtering are far lower than for MBE and CVD, and this technique is also much less polluting.